SI7852ADP-T1-E3

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Mfr.Part #
SI7852ADP-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 80V 30A PPAK SO-8
Stock
2,413
In Stock :
2,413

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-XDSO-C5
Mount :
Surface Mount
Element Configuration :
Single
Terminal Form :
C BEND
Power Dissipation :
5W
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Number of Channels :
1
Factory Lead Time :
14 Weeks
Package / Case :
PowerPAK® SO-8
Pulsed Drain Current-Max (IDM) :
60A
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Transistor Application :
SWITCHING
Resistance :
17mOhm
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Power Dissipation-Max :
5W Ta 62.5W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Nominal Vgs :
2.5 V
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Published :
2014
Vgs (Max) :
±20V
Number of Pins :
8
Width :
5.89mm
Terminal Position :
Dual
Threshold Voltage :
2.5V
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
8
Series :
TrenchFET®
Fall Time (Typ) :
9 ns
Rds On (Max) @ Id, Vgs :
17m Ω @ 10A, 10V
Continuous Drain Current (ID) :
30A
Turn-Off Delay Time :
26 ns
Input Capacitance (Ciss) (Max) @ Vds :
1825pF @ 40V
Peak Reflow Temperature (Cel) :
260
Terminal Finish :
MATTE TIN
Drain to Source Voltage (Vdss) :
80V
Weight :
506.605978mg
Turn On Delay Time :
16 ns
Drive Voltage (Max Rds On,Min Rds On) :
8V 10V
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Case Connection :
DRAIN
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
5
Height :
1.04mm
Radiation Hardening :
No
Length :
4.9mm
Pbfree Code :
yes
Lead Free :
Lead Free
Mounting Type :
Surface Mount
Rise Time :
9ns
Avalanche Energy Rating (Eas) :
45 mJ
Datasheets
SI7852ADP-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7852ADP-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Package / Case:PowerPAK® SO-8, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Mounting Type:Surface Mount, SI7852ADP-T1-E3 pinout, SI7852ADP-T1-E3 datasheet PDF, SI7852ADP-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7852ADP-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7852ADP-T1-E3


N-Channel Tape & Reel (TR) 17m Ω @ 10A, 10V ±20V 1825pF @ 40V 45nC @ 10V 80V PowerPAK® SO-8

SI7852ADP-T1-E3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.The maximum input capacitance of this device is 1825pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 16 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 80V in order to operate.Using drive voltage (8V 10V), this device helps reduce its power consumption.

SI7852ADP-T1-E3 Features


the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 26 ns
based on its rated peak drain current 60A.
a threshold voltage of 2.5V
a 80V drain to source voltage (Vdss)


SI7852ADP-T1-E3 Applications


There are a lot of Vishay Siliconix
SI7852ADP-T1-E3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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