SI7848DP-T1-E3

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Mfr.Part #
SI7848DP-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 40V 10.4A PPAK SO-8
Stock
5,578
In Stock :
5,578

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
1.83W
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Min Operating Temperature :
-55°C
Number of Pins :
8
Height :
1.04mm
Rise Time :
10ns
Fall Time (Typ) :
10 ns
Drain to Source Voltage (Vdss) :
40V
Series :
TrenchFET®
Number of Channels :
1
Supplier Device Package :
PowerPAK® SO-8
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rds On Max :
9 mΩ
Turn On Delay Time :
15 ns
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 5V
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Published :
2008
Max Operating Temperature :
150°C
Drain to Source Breakdown Voltage :
40V
Power Dissipation-Max :
1.83W Ta
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Number of Elements :
1
Continuous Drain Current (ID) :
10.4A
Operating Temperature :
-55°C~150°C TJ
Width :
5.89mm
Package / Case :
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C :
10.4A Ta
Weight :
506.605978mg
Length :
4.9mm
Rds On (Max) @ Id, Vgs :
9mOhm @ 14A, 10V
Mount :
Surface Mount
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
3V @ 250µA
Turn-Off Delay Time :
50 ns
Drain to Source Resistance :
12mOhm
Datasheets
SI7848DP-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7848DP-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:PowerPAK® SO-8, SI7848DP-T1-E3 pinout, SI7848DP-T1-E3 datasheet PDF, SI7848DP-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7848DP-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7848DP-T1-E3


N-Channel Tape & Reel (TR) 9mOhm @ 14A, 10V ±20V 28nC @ 5V 40V PowerPAK® SO-8

SI7848DP-T1-E3 Overview


Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10.4A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 12mOhm.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI7848DP-T1-E3 Features


a continuous drain current (ID) of 10.4A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 12mOhm
a 40V drain to source voltage (Vdss)


SI7848DP-T1-E3 Applications


There are a lot of Vishay Siliconix
SI7848DP-T1-E3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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