SI7846DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4.5 V

Power Dissipation-Max :

1.9W Ta

Fall Time (Typ) :

7 ns

Factory Lead Time :

14 Weeks

Height :

1.12mm

Number of Elements :

1

Continuous Drain Current (ID) :

6.7A

FET Type :

N-Channel

Published :

2016

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mounting Type :

Surface Mount

Radiation Hardening :

No

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Resistance :

50mOhm

Drain to Source Breakdown Voltage :

150V

Pulsed Drain Current-Max (IDM) :

50A

Packaging :

Tape and Reel (TR)

REACH SVHC :

Unknown

Weight :

506.605978mg

Number of Channels :

1

Turn-Off Delay Time :

22 ns

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

150V

Drain Current-Max (Abs) (ID) :

4A

JESD-30 Code :

R-XDSO-C5

Vgs (Max) :

±20V

Case Connection :

DRAIN

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Power Dissipation :

1.9W

Length :

4.9mm

ECCN Code :

EAR99

Number of Pins :

8

Turn On Delay Time :

12 ns

Package / Case :

PowerPAK® SO-8

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Width :

5.89mm

Terminal Form :

C BEND

Lead Free :

Lead Free

Threshold Voltage :

4.5V

Number of Terminations :

5

Additional Feature :

FAST SWITCHING

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

4A Ta

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

50m Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rise Time :

7ns