SI7686DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Radiation Hardening :

No

Package / Case :

PowerPAK® SO-8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

8 ns

Power Dissipation :

5W

Avalanche Energy Rating (Eas) :

5 mJ

Power Dissipation-Max :

5W Ta 37.9W Tc

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Terminal Position :

Dual

Weight :

506.605978mg

Pulsed Drain Current-Max (IDM) :

50A

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

35A

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Resistance :

9.5MOhm

Published :

2014

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Length :

4.9mm

Turn On Delay Time :

13 ns

Factory Lead Time :

14 Weeks

Terminal Form :

C BEND

Number of Pins :

8

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-XDSO-C5

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Number of Channels :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V

Turn-Off Delay Time :

23 ns

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 13.8A, 10V

Case Connection :

DRAIN

Height :

1.04mm

Element Configuration :

Single

ECCN Code :

EAR99

Rise Time :

16ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Width :

5.89mm

Pbfree Code :

yes

Pin Count :

8

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260