SI7601DN-T1-E3
- Mfr.Part #
- SI7601DN-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 16A PPAK1212-8
- Stock
- 9,850
- In Stock :
- 9,850
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 18 ns
- Number of Pins :
- 8
- Number of Channels :
- 1
- Power Dissipation :
- 3.8W
- Turn-Off Delay Time :
- 53 ns
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Element Configuration :
- Single
- Package / Case :
- PowerPAK® 1212-8
- Packaging :
- Tape and Reel (TR)
- Rds On Max :
- 19.2 mΩ
- Mounting Type :
- Surface Mount
- Series :
- TrenchFET®
- Drain to Source Voltage (Vdss) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 19.2mOhm @ 11A, 4.5V
- Vgs(th) (Max) @ Id :
- 1.6V @ 250μA
- Min Operating Temperature :
- -50°C
- Fall Time (Typ) :
- 80 ns
- Input Capacitance :
- 1.87nF
- Vgs (Max) :
- ±12V
- Drain to Source Resistance :
- 19mOhm
- Operating Temperature :
- -50°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.05mm
- Number of Elements :
- 1
- Supplier Device Package :
- PowerPAK® 1212-8
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 5V
- Width :
- 3.05mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1870pF @ 10V
- Height :
- 1.04mm
- Published :
- 2012
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 12V
- Power Dissipation-Max :
- 3.8W Ta 52W Tc
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- 11.5A
- Rise Time :
- 112ns
- Datasheets
- SI7601DN-T1-E3
P-Channel Tape & Reel (TR) 19.2mOhm @ 11A, 4.5V ±12V 1870pF @ 10V 27nC @ 5V 20V PowerPAK® 1212-8
SI7601DN-T1-E3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1870pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11.5A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.This device has a drain-to-source resistance of 19mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
SI7601DN-T1-E3 Features
a continuous drain current (ID) of 11.5A
the turn-off delay time is 53 ns
single MOSFETs transistor is 19mOhm
a 20V drain to source voltage (Vdss)
SI7601DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7601DN-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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