SI7633DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-XDSO-C5

Fall Time (Typ) :

50 ns

Mounting Type :

Surface Mount

Pbfree Code :

yes

Rise Time :

90ns

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Drain-source On Resistance-Max :

0.0033Ohm

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

5

Weight :

506.605978mg

Mount :

Surface Mount

Radiation Hardening :

No

Case Connection :

DRAIN

Continuous Drain Current (ID) :

34A

Power Dissipation-Max :

6.25W Ta 104W Tc

Turn-Off Delay Time :

100 ns

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Height :

1.04mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 20A, 10V

Terminal Position :

Dual

Number of Elements :

1

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Package / Case :

PowerPAK® SO-8

Input Capacitance (Ciss) (Max) @ Vds :

9500pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

100 ns

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

60A

Drain to Source Breakdown Voltage :

-20V

Pin Count :

8

Number of Pins :

8

Width :

5.89mm

Terminal Form :

C BEND

Transistor Application :

SWITCHING

Length :

4.9mm

Power Dissipation :

6.25W

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V