SI7629DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

20 mJ

Vgs (Max) :

±12V

Element Configuration :

Single

Resistance :

4.6mOhm

JESD-30 Code :

S-XDSO-C5

Package / Case :

PowerPAK® 1212-8

Power Dissipation :

3.7W

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Number of Channels :

1

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Power Dissipation-Max :

3.7W Ta 52W Tc

Case Connection :

DRAIN

Published :

2013

JESD-609 Code :

e3

Radiation Hardening :

No

Number of Pins :

8

Continuous Drain Current (ID) :

21.3A

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

5790pF @ 10V

ECCN Code :

EAR99

Pbfree Code :

yes

Pin Count :

8

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

177nC @ 10V

Mount :

Surface Mount

Terminal Form :

C BEND

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Terminations :

5

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

35A

Terminal Position :

Dual