SI7625DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

3.7W Ta 52W Tc

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Series :

TrenchFET®

JESD-30 Code :

S-XDSO-C5

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Factory Lead Time :

14 Weeks

FET Type :

P-Channel

Radiation Hardening :

No

DS Breakdown Voltage-Min :

30V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Package / Case :

PowerPAK® 1212-8

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Number of Channels :

1

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

20 mJ

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Drain Current-Max (Abs) (ID) :

35A

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

3.7W

RoHS Status :

ROHS3 Compliant

Published :

2010

Threshold Voltage :

-1V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

7m Ω @ 15A, 10V

Pin Count :

8

Element Configuration :

Single

Resistance :

7mOhm

Continuous Drain Current (ID) :

17.3A

Gate Charge (Qg) (Max) @ Vgs :

126nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Vgs (Max) :

±20V

Number of Terminations :

5

Terminal Form :

C BEND

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

4427pF @ 15V