SI7619DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

S-XDSO-C5

Rds On (Max) @ Id, Vgs :

21m Ω @ 10.5A, 10V

Mount :

Surface Mount

JESD-609 Code :

e3

Resistance :

21mOhm

Pin Count :

8

Fall Time (Typ) :

12 ns

Pbfree Code :

yes

Number of Elements :

1

Terminal Form :

C BEND

Turn On Delay Time :

10 ns

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

45 ns

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Drain to Source Breakdown Voltage :

-30V

Radiation Hardening :

No

Continuous Drain Current (ID) :

10.5A

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

50A

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 15V

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Terminal Position :

Dual

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

20 mJ

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2009

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

24A

Power Dissipation-Max :

3.5W Ta 27.8W Tc

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Power Dissipation :

3.5W

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

30V

Number of Channels :

1

Rise Time :

8ns

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Package / Case :

PowerPAK® 1212-8