SI7620DN-T1-GE3
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- Mfr.Part #
- SI7620DN-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 13A PPAK1212-8
- Stock
- 39,606
- In Stock ：
- 39,606
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- PowerPAK® 1212-8
- Fall Time (Typ) :
- 5 ns
- Mount :
- Surface Mount
- Rds On Max :
- 126 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 75V
- Turn On Delay Time :
- 12 ns
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Resistance :
- 126mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 3.1496mm
- Rds On (Max) @ Id, Vgs :
- 126mOhm @ 3.6A, 10V
- Length :
- 3.1496mm
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Power Dissipation :
- 3.8W
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 5ns
- Drain to Source Breakdown Voltage :
- 150V
- Drain to Source Voltage (Vdss) :
- 150V
- Max Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Series :
- TrenchFET®
- Continuous Drain Current (ID) :
- 13A
- Drain to Source Resistance :
- 103mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Input Capacitance :
- 600pF
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 3.8W Ta 5.2W Tc
- Turn-Off Delay Time :
- 15 ns
- Height :
- 1.0668mm
- Min Operating Temperature :
- -55°C
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- PowerPAK® 1212-8
- Datasheets
- SI7620DN-T1-GE3
N-Channel Tape & Reel (TR) 126mOhm @ 3.6A, 10V ±20V 600pF @ 75V 15nC @ 10V 150V PowerPAK® 1212-8
SI7620DN-T1-GE3 Overview
A device's maximum input capacitance is 600pF @ 75V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 103mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 150V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
SI7620DN-T1-GE3 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 103mOhm
a 150V drain to source voltage (Vdss)
SI7620DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7620DN-T1-GE3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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