SI7617DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

42 mJ

Power Dissipation :

3.7W

Pin Count :

8

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-2.5V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

32 ns

Number of Channels :

1

ECCN Code :

EAR99

Pbfree Code :

yes

Continuous Drain Current (ID) :

-35A

Published :

2013

Drain to Source Breakdown Voltage :

-30V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 15V

Packaging :

Tape and Reel (TR)

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Terminal Form :

C BEND

Element Configuration :

Single

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

60A

Package / Case :

PowerPAK® 1212-8

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Number of Pins :

8

Fall Time (Typ) :

11 ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

12.3m Ω @ 13.9A, 10V

JESD-30 Code :

S-XDSO-C5

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Power Dissipation-Max :

3.7W Ta 52W Tc

Gate to Source Voltage (Vgs) :

25V

Rise Time :

43ns

Height :

1.12mm

Drain to Source Voltage (Vdss) :

30V

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

11 ns

Vgs (Max) :

±25V

FET Type :

P-Channel