SI7601DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

53 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

19.2mOhm @ 11A, 4.5V

Power Dissipation-Max :

3.8W Ta 52W Tc

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain to Source Resistance :

19mOhm

Max Operating Temperature :

150°C

Input Capacitance :

1.87nF

Package / Case :

PowerPAK® 1212-8

Rds On Max :

19.2 mΩ

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1870pF @ 10V

Rise Time :

112ns

Series :

TrenchFET®

Continuous Drain Current (ID) :

-16A

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

PowerPAK® 1212-8

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 5V

Operating Temperature :

-50°C~150°C TJ

Min Operating Temperature :

-50°C

Turn On Delay Time :

18 ns

Drain to Source Voltage (Vdss) :

20V

Fall Time (Typ) :

80 ns

Vgs (Max) :

±12V

Number of Pins :

8

Mounting Type :

Surface Mount

Published :

2013

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant