SI7623DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Number of Terminations :

5

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Published :

2013

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Series :

TrenchFET®

Packaging :

Digi-Reel®

Package / Case :

PowerPAK® 1212-8

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 20A, 10V

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Vgs (Max) :

±12V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.7W Ta 52W Tc

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Threshold Voltage :

-400mV

Radiation Hardening :

No

Mount :

Surface Mount

Case Connection :

DRAIN

Lead Free :

Lead Free

Terminal Form :

C BEND

Power Dissipation :

3.7W

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

-35A

Input Capacitance (Ciss) (Max) @ Vds :

5460pF @ 10V

Avalanche Energy Rating (Eas) :

20 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

S-PDSO-C5

Number of Channels :

1

Drain to Source Voltage (Vdss) :

20V

Drain to Source Breakdown Voltage :

-20V

Number of Pins :

8

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Transistor Application :

SWITCHING

JESD-609 Code :

e3