SI7615ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

85 ns

Drain to Source Voltage (Vdss) :

20V

Resistance :

4.4mOhm

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

5590pF @ 10V

Width :

3.4mm

Gate to Source Voltage (Vgs) :

12V

Avalanche Energy Rating (Eas) :

20 mJ

JESD-30 Code :

S-PDSO-C5

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Package / Case :

PowerPAK® 1212-8

Drain to Source Breakdown Voltage :

-20V

Terminal Form :

C BEND

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

183nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Turn On Delay Time :

13 ns

Published :

2013

Continuous Drain Current (ID) :

-22.1A

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Fall Time (Typ) :

26 ns

Drain Current-Max (Abs) (ID) :

35A

Series :

TrenchFET®

Height :

1.12mm

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Length :

3.4mm

Rise Time :

40ns

Number of Terminations :

5

Vgs (Max) :

±12V

Number of Channels :

1

Power Dissipation-Max :

3.7W Ta 52W Tc

Element Configuration :

Single

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 20A, 10V

Power Dissipation :

3.7W

Number of Elements :

1

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Radiation Hardening :

No

Lead Free :

Lead Free

Number of Pins :

8

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Max Junction Temperature (Tj) :

150°C

Threshold Voltage :

-400mV

JESD-609 Code :

e3

Case Connection :

DRAIN