SI7615DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Case Connection :

DRAIN

Power Dissipation-Max :

3.7W Ta 52W Tc

Number of Elements :

1

Number of Channels :

1

Fall Time (Typ) :

28 ns

Drain to Source Voltage (Vdss) :

20V

Package / Case :

PowerPAK® 1212-8

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Power Dissipation :

3.7W

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

22.6A

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 10V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

8

Rise Time :

38ns

Terminal Form :

C BEND

Terminal Position :

Dual

JESD-30 Code :

S-XDSO-C5

Turn On Delay Time :

35 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 20A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Width :

3.3mm

Length :

3.3mm

Resistance :

3.9MOhm

Gate Charge (Qg) (Max) @ Vgs :

183nC @ 10V

Avalanche Energy Rating (Eas) :

20 mJ

Gate to Source Voltage (Vgs) :

12V

Pin Count :

8

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Published :

2011

Turn-Off Delay Time :

80 ns

JESD-609 Code :

e3

Vgs (Max) :

±12V

FET Type :

P-Channel

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Drain to Source Breakdown Voltage :

-20V

Continuous Drain Current (ID) :

-35A

Series :

TrenchFET®