SI7621DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.1W Ta 12.5W Tc

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerPAK® 1212-8

Turn On Delay Time :

8 ns

Drain to Source Voltage (Vdss) :

20V

Rise Time :

75ns

Pin Count :

8

Terminal Finish :

PURE MATTE TIN

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Pbfree Code :

yes

Mounting Type :

Surface Mount

Case Connection :

DRAIN

FET Type :

P-Channel

Turn-Off Delay Time :

25 ns

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 5V

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

20V

Power Dissipation :

3.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

4A

Drain-source On Resistance-Max :

0.09Ohm

Number of Pins :

8

Transistor Application :

SWITCHING

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

JESD-609 Code :

e3

Radiation Hardening :

No

Fall Time (Typ) :

60 ns

Gate to Source Voltage (Vgs) :

12V

Rds On (Max) @ Id, Vgs :

90m Ω @ 3.9A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Continuous Drain Current (ID) :

4A

Vgs(th) (Max) @ Id :

2V @ 250μA

ECCN Code :

EAR99

Terminal Form :

C BEND

JESD-30 Code :

S-XDSO-C5