SI7611DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

25m Ω @ 9.3A, 10V

Threshold Voltage :

-1V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2005

Height :

1.17mm

JESD-30 Code :

S-XDSO-C5

Power Dissipation-Max :

3.7W Ta 39W Tc

Time@Peak Reflow Temperature-Max (s) :

40

Series :

TrenchFET®

Number of Pins :

8

Power Dissipation :

3.7W

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

30 ns

Package / Case :

PowerPAK® 1212-8

Continuous Drain Current (ID) :

-18A

Lead Free :

Lead Free

Nominal Vgs :

-3 V

JESD-609 Code :

e3

Length :

3.05mm

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

-40V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

ECCN Code :

EAR99

Fall Time (Typ) :

9 ns

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1980pF @ 20V

Case Connection :

DRAIN

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

11ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

20A

Width :

3.05mm

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Resistance :

25mOhm

FET Type :

P-Channel

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

26 mJ

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

40V

Turn On Delay Time :

10 ns

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

9.3A

Pin Count :

8

Number of Terminations :

5

Transistor Element Material :

SILICON

Terminal Form :

C BEND

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-50°C~150°C TJ