SI7611DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Avalanche Energy Rating (Eas) :

26 mJ

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Package / Case :

PowerPAK® 1212-8

Rise Time :

11ns

Time@Peak Reflow Temperature-Max (s) :

40

Length :

3.05mm

Input Capacitance (Ciss) (Max) @ Vds :

1980pF @ 20V

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Continuous Drain Current (ID) :

-18A

Number of Terminations :

5

REACH SVHC :

Unknown

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Threshold Voltage :

-1V

Drain to Source Breakdown Voltage :

-40V

Height :

1.17mm

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Operating Temperature :

-50°C~150°C TJ

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

20A

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Turn-Off Delay Time :

30 ns

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

3.7W

Number of Pins :

8

Terminal Form :

C BEND

Transistor Application :

SWITCHING

Pin Count :

8

Published :

2005

JESD-30 Code :

S-XDSO-C5

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.7W Ta 39W Tc

Vgs (Max) :

±20V

Turn On Delay Time :

10 ns

Fall Time (Typ) :

9 ns

Rds On (Max) @ Id, Vgs :

25m Ω @ 9.3A, 10V

Radiation Hardening :

No

Nominal Vgs :

-3 V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

9.3A

Series :

TrenchFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Number of Channels :

1

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Resistance :

25mOhm

Width :

3.05mm

Drain to Source Voltage (Vdss) :

40V