SI7682DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Mount :

Surface Mount

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Finish :

MATTE TIN

Series :

TrenchFET®

Case Connection :

DRAIN

JESD-30 Code :

R-XDSO-C5

Pin Count :

8

Number of Pins :

8

Radiation Hardening :

No

Number of Elements :

1

Package / Case :

PowerPAK® SO-8

Pulsed Drain Current-Max (IDM) :

50A

Drain Current-Max (Abs) (ID) :

17.5A

Continuous Drain Current (ID) :

20A

Packaging :

Tape and Reel (TR)

Terminal Form :

C BEND

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

ECCN Code :

EAR99

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.009Ohm

Power Dissipation-Max :

5W Ta 27.5W Tc

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

18 ns

Rds On (Max) @ Id, Vgs :

9m Ω @ 20A, 10V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1595pF @ 15V