SI7682DP-T1-E3
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- Mfr.Part #
- SI7682DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 20A PPAK SO-8
- Stock
- 16,522
- In Stock ：
- 16,522
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Published :
- 2013
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 20A, 10V
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 50A
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Number of Pins :
- 8
- Pin Count :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1595pF @ 15V
- JESD-30 Code :
- R-XDSO-C5
- ECCN Code :
- EAR99
- Rise Time :
- 82ns
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current (ID) :
- 17.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation :
- 5W
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Fall Time (Typ) :
- 10 ns
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 9mOhm
- Terminal Form :
- C BEND
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- PowerPAK® SO-8
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Power Dissipation-Max :
- 5W Ta 27.5W Tc
- Number of Terminations :
- 5
- Turn On Delay Time :
- 18 ns
- Turn-Off Delay Time :
- 18 ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain to Source Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Series :
- TrenchFET®
- Datasheets
- SI7682DP-T1-E3
N-Channel Tape & Reel (TR) 9m Ω @ 20A, 10V ±20V 1595pF @ 15V 38nC @ 10V PowerPAK® SO-8
SI7682DP-T1-E3 Overview
A device's maximum input capacitance is 1595pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 17.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.Its maximum pulsed drain current is 50A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI7682DP-T1-E3 Features
a continuous drain current (ID) of 17.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
based on its rated peak drain current 50A.
SI7682DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7682DP-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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