SI7674DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 20A, 10V

Power Dissipation :

5.4W

Input Capacitance :

5.91nF

Mount :

Surface Mount

Max Operating Temperature :

150°C

Published :

2016

Input Capacitance (Ciss) (Max) @ Vds :

5910pF @ 15V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Power Dissipation-Max :

5.4W Ta 83W Tc

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Resistance :

3.3MOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Rds On Max :

3.3 mΩ

Packaging :

Tape and Reel (TR)

Supplier Device Package :

PowerPAK® SO-8

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Resistance :

3.3MOhm

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Turn-Off Delay Time :

26 ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® SO-8

Drain to Source Breakdown Voltage :

30V

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

40A