SI7674DP-T1-E3

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Mfr.Part #
SI7674DP-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 30V 40A PPAK SO-8
Stock
30,631
In Stock :
30,631

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
26 ns
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
9 ns
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Package / Case :
PowerPAK® SO-8
Mount :
Surface Mount
Power Dissipation-Max :
5.4W Ta 83W Tc
Min Operating Temperature :
-55°C
Drain to Source Breakdown Voltage :
30V
Power Dissipation :
5.4W
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Input Capacitance :
5.91nF
Supplier Device Package :
PowerPAK® SO-8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On Max :
3.3 mΩ
Max Operating Temperature :
150°C
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
5910pF @ 15V
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
3V @ 250µA
Drain to Source Resistance :
3.3MOhm
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
30V
Published :
2016
Mounting Type :
Surface Mount
Element Configuration :
Single
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
40A
Rise Time :
210ns
Rds On (Max) @ Id, Vgs :
3.3mOhm @ 20A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Datasheets
SI7674DP-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7674DP-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PowerPAK® SO-8, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, SI7674DP-T1-E3 pinout, SI7674DP-T1-E3 datasheet PDF, SI7674DP-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7674DP-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7674DP-T1-E3


N-Channel Tape & Reel (TR) 3.3mOhm @ 20A, 10V ±20V 5910pF @ 15V 90nC @ 10V 30V PowerPAK® SO-8

SI7674DP-T1-E3 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5910pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 26 ns.This device has a drain-to-source resistance of 3.3mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SI7674DP-T1-E3 Features


a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 3.3mOhm
a 30V drain to source voltage (Vdss)


SI7674DP-T1-E3 Applications


There are a lot of Vishay Siliconix
SI7674DP-T1-E3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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