SI7674DP-T1-E3
- Mfr.Part #
- SI7674DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 40A PPAK SO-8
- Stock
- 30,631
- In Stock :
- 30,631
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 26 ns
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 9 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Package / Case :
- PowerPAK® SO-8
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 5.4W Ta 83W Tc
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation :
- 5.4W
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Input Capacitance :
- 5.91nF
- Supplier Device Package :
- PowerPAK® SO-8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 3.3 mΩ
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5910pF @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain to Source Resistance :
- 3.3MOhm
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Published :
- 2016
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 40A
- Rise Time :
- 210ns
- Rds On (Max) @ Id, Vgs :
- 3.3mOhm @ 20A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- SI7674DP-T1-E3
N-Channel Tape & Reel (TR) 3.3mOhm @ 20A, 10V ±20V 5910pF @ 15V 90nC @ 10V 30V PowerPAK® SO-8
SI7674DP-T1-E3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5910pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 26 ns.This device has a drain-to-source resistance of 3.3mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SI7674DP-T1-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 3.3mOhm
a 30V drain to source voltage (Vdss)
SI7674DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7674DP-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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