SI7668ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.003Ohm

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Turn-Off Delay Time :

56 ns

Rds On (Max) @ Id, Vgs :

3m Ω @ 25A, 10V

Rise Time :

33ns

Power Dissipation-Max :

5.4W Ta 83W Tc

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

8820pF @ 15V

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Height :

1.04mm

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Continuous Drain Current (ID) :

31A

Drain Current-Max (Abs) (ID) :

40A

Fall Time (Typ) :

14 ns

Series :

TrenchFET®

Package / Case :

PowerPAK® SO-8

Vgs (Max) :

±12V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

FET Type :

N-Channel

Radiation Hardening :

No

Transistor Application :

SWITCHING

Published :

2013

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Turn On Delay Time :

33 ns

Mount :

Surface Mount

Weight :

506.605978mg

Power Dissipation :

5.4W

Terminal Form :

C BEND

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Number of Pins :

8

Length :

5.15mm

Pbfree Code :

yes

Width :

6.15mm

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PDSO-C5

Pulsed Drain Current-Max (IDM) :

70A