SI7664DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

41 ns

Drain to Source Resistance :

3.1mOhm

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Power Dissipation :

5.4W

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

30V

Package / Case :

PowerPAK® SO-8

Element Configuration :

Single

Series :

TrenchFET®

Resistance :

3.1mOhm

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

5.4W Ta 83W Tc

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Vgs (Max) :

±12V

Rise Time :

103ns

Published :

2013

Supplier Device Package :

PowerPAK® SO-8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3.1mOhm @ 20A, 10V

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

40A

FET Type :

N-Channel

Mount :

Surface Mount

Mounting Type :

Surface Mount

Fall Time (Typ) :

9 ns

Input Capacitance :

7.77nF

Rds On Max :

3.1 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

7770pF @ 15V