SI7655DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Power Dissipation :

4.8W

Height :

780μm

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-500mV

Operating Temperature :

-50°C~150°C TJ

Terminal Form :

C BEND

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Width :

3.3mm

Case Connection :

DRAIN

JESD-30 Code :

S-PDSO-C5

Transistor Element Material :

SILICON

Turn-Off Delay Time :

110 ns

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

45 ns

Continuous Drain Current (ID) :

-40A

FET Type :

P-Channel

Mount :

Surface Mount

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

40A Tc

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Element Configuration :

Dual

Contact Plating :

Tin

Package / Case :

PowerPAK® 1212-8S

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 10V

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Number of Terminations :

5

Power Dissipation-Max :

4.8W Ta 57W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.3mm

Series :

TrenchFET®

Drain-source On Resistance-Max :

0.0036Ohm

Number of Elements :

1

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 20A, 10V

Number of Channels :

2

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Published :

2013