SI7635DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

JESD-30 Code :

R-PDSO-C5

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

143nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4595pF @ 10V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1

Terminal Position :

Dual

Nominal Vgs :

-2.2 V

Pulsed Drain Current-Max (IDM) :

70A

Weight :

506.605978mg

Terminal Form :

C BEND

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Published :

2014

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 26A, 10V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

-40A

Turn On Delay Time :

19 ns

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Resistance :

4.9mOhm

Mounting Type :

Surface Mount

Pin Count :

8

Vgs (Max) :

±16V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.2V @ 250µA

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

13 ns

Transistor Application :

SWITCHING

Rise Time :

10ns

Power Dissipation :

5W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Number of Terminations :

5

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-20V

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

16V

Turn-Off Delay Time :

65 ns

Package / Case :

PowerPAK® SO-8

Number of Pins :

8

Series :

TrenchFET®

Power Dissipation-Max :

5W Ta 54W Tc

Threshold Voltage :

-2.2V