SI7634BDP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

70A

ECCN Code :

EAR99

Continuous Drain Current (ID) :

40A

Package / Case :

PowerPAK® SO-8

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Resistance :

5.4mOhm

Height :

1.04mm

Turn On Delay Time :

30 ns

Pbfree Code :

yes

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

45 mJ

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Published :

2013

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

5W Ta 48W Tc

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 15A, 10V

Rise Time :

12ns

Element Configuration :

Single

Number of Terminations :

5

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

12 ns

Mounting Type :

Surface Mount

Width :

5.89mm

Series :

TrenchFET®

Turn-Off Delay Time :

34 ns

Drain Current-Max (Abs) (ID) :

22.5A

Number of Channels :

1

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

14 Weeks

Weight :

506.605978mg

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

C BEND

Length :

4.9mm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

JESD-30 Code :

R-XDSO-C5