SI5499DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

5V

Supplier Device Package :

1206-8 ChipFET™

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1290pF @ 4V

Package / Case :

8-SMD, Flat Lead

Drain to Source Resistance :

36mOhm

Input Capacitance :

1.29nF

Number of Elements :

1

Max Operating Temperature :

150°C

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 8V

Vgs (Max) :

±5V

Rds On Max :

36 mΩ

Number of Pins :

8

Vgs(th) (Max) @ Id :

800mV @ 250μA

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

8V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

36mOhm @ 5.1A, 4.5V

Fall Time (Typ) :

55 ns

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

8V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Series :

TrenchFET®

FET Type :

P-Channel

Continuous Drain Current (ID) :

6A

Turn-Off Delay Time :

55 ns

Rise Time :

70ns

Power Dissipation-Max :

2.5W Ta 6.2W Tc

Mount :

Surface Mount

Power Dissipation :

2.5W