SI5402DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

10ns

Package / Case :

8-SMD, Flat Lead

Drain-source On Resistance-Max :

0.035Ohm

Turn-Off Delay Time :

25 ns

Fall Time (Typ) :

10 ns

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.9A, 10V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Terminal Form :

C BEND

Packaging :

Tape and Reel (TR)

Published :

2015

Drain to Source Breakdown Voltage :

30V

Series :

TrenchFET®

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Elements :

1

JESD-609 Code :

e3

ECCN Code :

EAR99

Terminal Position :

Dual

Power Dissipation-Max :

1.3W Ta

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.9A Ta

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

4.9A

Radiation Hardening :

No

Vgs (Max) :

±20V

Power Dissipation :

1.3W

Turn On Delay Time :

10 ns

Number of Pins :

8

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8