SI5402BDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Continuous Drain Current (ID) :

6.1A

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.9A, 10V

Power Dissipation-Max :

1.3W Ta

Terminal Form :

C BEND

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Turn-Off Delay Time :

27 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Threshold Voltage :

1V

Mount :

Surface Mount

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

4.9A Ta

Package / Case :

8-SMD, Flat Lead

Turn On Delay Time :

10 ns

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

Published :

2015

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

1.3W

Number of Terminations :

8

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

10 ns

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

4.9A

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Rise Time :

10ns

Drain-source On Resistance-Max :

0.035Ohm

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Pin Count :

8

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V