SI5401DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Rds On Max :

32 mΩ

Current - Continuous Drain (Id) @ 25°C :

5.2A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Max Operating Temperature :

150°C

Weight :

84.99187mg

Continuous Drain Current (ID) :

5.2A

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate to Source Voltage (Vgs) :

8V

Rise Time :

25ns

Turn-Off Delay Time :

115 ns

Rds On (Max) @ Id, Vgs :

32mOhm @ 5.2A, 4.5V

Number of Pins :

8

Turn On Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

Package / Case :

8-SMD, Flat Lead

Vgs (Max) :

±8V

Power Dissipation-Max :

1.3W Ta

Drain to Source Resistance :

32mOhm

FET Type :

P-Channel

Fall Time (Typ) :

25 ns

Number of Channels :

1

Supplier Device Package :

1206-8 ChipFET™

Series :

TrenchFET®

Published :

2011

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Breakdown Voltage :

-20V

Power Dissipation :

1.3W

Mount :

Surface Mount