SI5401DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

5.2A

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Drain to Source Resistance :

32mOhm

FET Type :

P-Channel

Max Operating Temperature :

150°C

Element Configuration :

Single

Drain to Source Breakdown Voltage :

20V

Current - Continuous Drain (Id) @ 25°C :

5.2A Ta

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate to Source Voltage (Vgs) :

8V

Rds On Max :

32 mΩ

Resistance :

32mOhm

Series :

TrenchFET®

Supplier Device Package :

1206-8 ChipFET™

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Turn-Off Delay Time :

115 ns

Rds On (Max) @ Id, Vgs :

32mOhm @ 5.2A, 4.5V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Published :

2013

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.3W Ta

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±8V

Package / Case :

8-SMD, Flat Lead

Power Dissipation :

1.3W