SI5404BDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Series :

TrenchFET®

Turn-Off Delay Time :

25 ns

Threshold Voltage :

1.5V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±12V

Number of Channels :

1

Number of Terminations :

8

Continuous Drain Current (ID) :

7.5A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns

Weight :

84.99187mg

REACH SVHC :

Unknown

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Terminal Form :

C BEND

FET Type :

N-Channel

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

5.4A Ta

Rds On (Max) @ Id, Vgs :

28m Ω @ 5.4A, 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Factory Lead Time :

24 Weeks

Radiation Hardening :

No

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

8-SMD, Flat Lead

Mount :

Surface Mount

Rise Time :

12ns

DS Breakdown Voltage-Min :

20V

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

5.4A

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.3W Ta

Published :

2015

Pulsed Drain Current-Max (IDM) :

20A

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Fall Time (Typ) :

10 ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V