SI5406CDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.3W Ta 5.7W Tc

Number of Pins :

8

Turn-Off Delay Time :

45 ns

Threshold Voltage :

1V

Package / Case :

8-SMD, Flat Lead

JESD-609 Code :

e3

REACH SVHC :

Unknown

Number of Terminations :

8

Power Dissipation :

2.3W

Weight :

84.99187mg

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain Current-Max (Abs) (ID) :

6A

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 8V

Pin Count :

8

Terminal Position :

Dual

ECCN Code :

EAR99

Radiation Hardening :

No

Vgs (Max) :

±8V

Resistance :

20mOhm

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

12V

Length :

3.05mm

Factory Lead Time :

13 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 6V

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

20m Ω @ 6.5A, 4.5V

Terminal Form :

C BEND

Published :

2015

Turn On Delay Time :

10 ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

10ns

Height :

1.1mm

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

20 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

6A

Width :

1.65mm