SI5404BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Drain to Source Resistance :

28mOhm

Length :

3.0988mm

Weight :

84.99187mg

Drain to Source Breakdown Voltage :

20V

Number of Pins :

8

Height :

1.0922mm

Threshold Voltage :

600mV

Width :

1.7018mm

Supplier Device Package :

1206-8 ChipFET™

Lead Free :

Lead Free

Power Dissipation :

1.3W

Gate to Source Voltage (Vgs) :

12V

Rds On Max :

28 mΩ

Rds On (Max) @ Id, Vgs :

28mOhm @ 5.4A, 4.5V

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Turn-Off Delay Time :

25 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Vgs (Max) :

±12V

Turn On Delay Time :

12 ns

FET Type :

N-Channel

Published :

2005

Rise Time :

12ns

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Package / Case :

8-SMD, Flat Lead

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5.4A Ta

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Continuous Drain Current (ID) :

7.5A

Drain to Source Voltage (Vdss) :

20V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Power Dissipation-Max :

1.3W Ta

Fall Time (Typ) :

12 ns

Resistance :

28mOhm