SI5402BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

1.0922mm

Mounting Type :

Surface Mount

Package / Case :

8-SMD, Flat Lead

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.9A, 10V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

C BEND

Radiation Hardening :

No

Number of Pins :

8

Transistor Element Material :

SILICON

Width :

1.7018mm

Power Dissipation :

2.5W

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Continuous Drain Current (ID) :

6.7A

Turn-Off Delay Time :

27 ns

Resistance :

35mOhm

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

4.9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1.3W Ta

Turn On Delay Time :

10 ns

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Length :

3.0988mm

JESD-609 Code :

e3

Fall Time (Typ) :

10 ns

Number of Terminations :

8

Element Configuration :

Single

Rise Time :

10ns

REACH SVHC :

No SVHC

Pin Count :

8

Threshold Voltage :

20V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

20A

RoHS Status :

ROHS3 Compliant

Published :

2009

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

4.9A Ta

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE