SI5410DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Mount :

Surface Mount

Turn On Delay Time :

25 ns

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

18m Ω @ 6.6A, 10V

Fall Time (Typ) :

12 ns

Package / Case :

PowerPAK® ChipFET™ Single

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 20V

Threshold Voltage :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3mm

Number of Terminations :

3

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Terminal Finish :

PURE MATTE TIN

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Terminal Position :

Dual

Case Connection :

DRAIN

Width :

1.9mm

Vgs (Max) :

±20V

FET Type :

N-Channel

JESD-30 Code :

R-XDSO-N3

Series :

TrenchFET®

Continuous Drain Current (ID) :

12A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

3.1W

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

30A

Turn-Off Delay Time :

25 ns

Power Dissipation-Max :

3.1W Ta 31W Tc

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Height :

750μm

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Time@Peak Reflow Temperature-Max (s) :

30