SI5403DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Length :

3.05mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-SMD, Flat Lead

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

6A

Number of Channels :

1

Turn-Off Delay Time :

30 ns

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1340pF @ 15V

Turn On Delay Time :

50 ns

Continuous Drain Current (ID) :

6A

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.2A, 10V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs (Max) :

±20V

Mount :

Surface Mount

Height :

1.1mm

Number of Terminations :

8

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

2.5W Ta 6.3W Tc

Series :

TrenchFET®

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Resistance :

30mOhm

Terminal Position :

Dual

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.5W

Published :

2015

Fall Time (Typ) :

18 ns

Lead Free :

Lead Free

Threshold Voltage :

-3V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

140ns

Number of Pins :

8

Transistor Element Material :

SILICON

Weight :

84.99187mg

Width :

1.65mm

DS Breakdown Voltage-Min :

30V

Terminal Form :

C BEND

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)