SI5406DC-T1-E3

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Mfr.Part #
SI5406DC-T1-E3
Manufacturer
Vishay
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
MOSFET N-CH 12V 6.9A 1206-8
Stock
2,852
In Stock :
2,852

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Power Dissipation-Max :
1.3W Ta
Vgs (Max) :
±8V
Number of Elements :
1
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
6.9A Ta
Mounting Type :
Surface Mount
Fall Time (Typ) :
46 ns
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 4.5V
Package / Case :
8-SMD, Flat Lead
Power Dissipation :
1.3W
Supplier Device Package :
1206-8 ChipFET™
Continuous Drain Current (ID) :
6.9A
Rds On Max :
20 mΩ
Series :
TrenchFET®
Number of Pins :
8
Max Operating Temperature :
150°C
Drain to Source Breakdown Voltage :
12V
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
8V
Drain to Source Resistance :
20mOhm
Min Operating Temperature :
-55°C
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
600mV @ 1.2mA (Min)
Number of Channels :
1
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
54 ns
Rds On (Max) @ Id, Vgs :
20mOhm @ 6.9A, 4.5V
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
17 ns
Height :
1.1mm
Weight :
84.99187mg
Rise Time :
46ns
Length :
3.05mm
FET Type :
N-Channel
Published :
2007
Width :
1.65mm
Datasheets
SI5406DC-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI5406DC-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-SMD, Flat Lead, Number of Pins:8, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, SI5406DC-T1-E3 pinout, SI5406DC-T1-E3 datasheet PDF, SI5406DC-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI5406DC-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI5406DC-T1-E3


N-Channel Tape & Reel (TR) 20mOhm @ 6.9A, 4.5V ±8V 20nC @ 4.5V 12V 8-SMD, Flat Lead

SI5406DC-T1-E3 Overview


In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 12V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 12V.As a result of its turn-off delay time, which is 54 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 20mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).

SI5406DC-T1-E3 Features


a continuous drain current (ID) of 6.9A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 54 ns
single MOSFETs transistor is 20mOhm
a 12V drain to source voltage (Vdss)


SI5406DC-T1-E3 Applications


There are a lot of Vishay Siliconix
SI5406DC-T1-E3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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