SI5414DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

1.5nF

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

6A

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

Rds On Max :

17 mΩ

Vgs (Max) :

±12V

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 10V

Number of Pins :

8

Fall Time (Typ) :

14 ns

Drain to Source Resistance :

40mOhm

Rise Time :

12ns

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Turn On Delay Time :

14 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation-Max :

2.5W Ta 6.3W Tc

Turn-Off Delay Time :

36 ns

Drain to Source Breakdown Voltage :

20V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

17mOhm @ 9.9A, 4.5V

Radiation Hardening :

No

Series :

TrenchFET®

Published :

2009

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

15 Weeks

Min Operating Temperature :

-55°C

Supplier Device Package :

1206-8 ChipFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Package / Case :

8-SMD, Flat Lead

Current - Continuous Drain (Id) @ 25°C :

6A Tc