SI5402DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Package / Case :

8-SMD, Flat Lead

Supplier Device Package :

1206-8 ChipFET™

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Rise Time :

10ns

Turn On Delay Time :

10 ns

Fall Time (Typ) :

10 ns

Power Dissipation-Max :

1.3W Ta

Continuous Drain Current (ID) :

4.9A

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Drain to Source Resistance :

35mOhm

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

35mOhm @ 4.9A, 10V

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Rds On Max :

35 mΩ

Turn-Off Delay Time :

25 ns

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Current - Continuous Drain (Id) @ 25°C :

4.9A Ta

Element Configuration :

Single

Power Dissipation :

2.5W

Series :

TrenchFET®

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V