SI5486DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 8V

Mount :

Surface Mount

JESD-609 Code :

e3

Height :

750μm

Width :

1.9mm

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Fall Time (Typ) :

10 ns

JESD-30 Code :

R-XDSO-N3

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 10V

Resistance :

15mOhm

Transistor Element Material :

SILICON

Series :

TrenchFET®

Mounting Type :

Surface Mount

Turn On Delay Time :

7 ns

Package / Case :

8-PowerVDFN

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

PURE MATTE TIN

Number of Terminations :

3

REACH SVHC :

Unknown

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Rise Time :

15ns

Power Dissipation :

3.1W

Radiation Hardening :

No

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1V

FET Type :

N-Channel

Pbfree Code :

yes

Vgs (Max) :

±8V

Power Dissipation-Max :

3.1W Ta 31W Tc

Number of Channels :

1

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

12A

Length :

3mm

Rds On (Max) @ Id, Vgs :

15m Ω @ 7.7A, 4.5V

Pulsed Drain Current-Max (IDM) :

40A

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Turn-Off Delay Time :

55 ns

Drain to Source Breakdown Voltage :

20V

Number of Elements :

1

ECCN Code :

EAR99

Case Connection :

DRAIN

Published :

2013