SI5486DU-T1-E3

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Mfr.Part #
SI5486DU-T1-E3
Manufacturer
Vishay
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 20V 12A CHIPFET
Stock
71,697
In Stock :
71,697

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
2100pF @ 10V
Rds On (Max) @ Id, Vgs :
15mOhm @ 7.7A, 4.5V
Fall Time (Typ) :
10 ns
Number of Channels :
1
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Published :
2017
Turn On Delay Time :
7 ns
Rds On Max :
15 mΩ
Min Operating Temperature :
-55°C
Height :
750μm
Mounting Type :
Surface Mount
Series :
TrenchFET®
RoHS Status :
ROHS3 Compliant
Input Capacitance :
2.1nF
Vgs (Max) :
±8V
Drain to Source Voltage (Vdss) :
20V
Operating Temperature :
-55°C~150°C TJ
Rise Time :
15ns
Supplier Device Package :
8-PowerPak® ChipFet (3x1.9)
Turn-Off Delay Time :
55 ns
Package / Case :
8-PowerVDFN
Width :
1.9mm
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
8V
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 8V
Drain to Source Resistance :
15mOhm
FET Type :
N-Channel
Length :
3mm
Continuous Drain Current (ID) :
12A
Packaging :
Tape and Reel (TR)
Max Operating Temperature :
150°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
3.1W Ta 31W Tc
Vgs(th) (Max) @ Id :
1V @ 250μA
Datasheets
SI5486DU-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI5486DU-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerVDFN, SI5486DU-T1-E3 pinout, SI5486DU-T1-E3 datasheet PDF, SI5486DU-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI5486DU-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI5486DU-T1-E3


N-Channel Tape & Reel (TR) 15mOhm @ 7.7A, 4.5V ±8V 2100pF @ 10V 54nC @ 8V 20V 8-PowerVDFN

SI5486DU-T1-E3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2100pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 15mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.

SI5486DU-T1-E3 Features


a continuous drain current (ID) of 12A
the turn-off delay time is 55 ns
single MOSFETs transistor is 15mOhm
a 20V drain to source voltage (Vdss)


SI5486DU-T1-E3 Applications


There are a lot of Vishay Siliconix
SI5486DU-T1-E3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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