SI5485DU-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

7 ns

Fall Time (Typ) :

80 ns

Package / Case :

PowerPAK® ChipFET™ Single

Published :

2017

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

750μm

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 8V

Length :

3mm

Series :

TrenchFET®

Rds On Max :

25 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

Input Capacitance :

1.1nF

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Power Dissipation-Max :

3.1W Ta 31W Tc

Min Operating Temperature :

-55°C

Supplier Device Package :

PowerPAK® ChipFet Single

Continuous Drain Current (ID) :

12A

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-20V

Vgs (Max) :

±12V

Drain to Source Resistance :

25mOhm

Turn-Off Delay Time :

50 ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

25mOhm @ 5.9A, 4.5V

Packaging :

Tape and Reel (TR)

Resistance :

25mOhm

Rise Time :

15ns

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain to Source Voltage (Vdss) :

20V

Width :

1.9mm

Max Operating Temperature :

150°C