SI5484DU-T1-GE3
- Mfr.Part #
- SI5484DU-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® ChipFET™ Single
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 12A PPAK
- Stock
- 1,747
- In Stock :
- 1,747
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- TrenchFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 10V
- Number of Pins :
- 8
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 20V
- Mount :
- Surface Mount
- Turn On Delay Time :
- 5 ns
- Length :
- 3mm
- Supplier Device Package :
- PowerPAK® ChipFet Single
- Input Capacitance :
- 1.6nF
- Width :
- 1.9mm
- Fall Time (Typ) :
- 10 ns
- Vgs (Max) :
- ±12V
- Rise Time :
- 15ns
- Power Dissipation-Max :
- 3.1W Ta 31W Tc
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 16mOhm @ 7.6A, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 12A
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 750μm
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Radiation Hardening :
- No
- Package / Case :
- PowerPAK® ChipFET™ Single
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Rds On Max :
- 16 mΩ
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Gate to Source Voltage (Vgs) :
- 12V
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 35 ns
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 16mOhm
- Published :
- 2013
- Datasheets
- SI5484DU-T1-GE3
N-Channel Tape & Reel (TR) 16mOhm @ 7.6A, 4.5V ±12V 1600pF @ 10V 55nC @ 10V 20V PowerPAK® ChipFET™ Single
SI5484DU-T1-GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1600pF @ 10V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 16mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
SI5484DU-T1-GE3 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 16mOhm
a 20V drain to source voltage (Vdss)
SI5484DU-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI5484DU-T1-GE3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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