SI5482DU-T1-GE3

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Mfr.Part #
SI5482DU-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® ChipFET™ Single
Datasheet
Download
Description
MOSFET N-CH 30V 12A PPAK
Stock
21,255
In Stock :
21,255

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
3mm
Rds On Max :
15 mΩ
Fall Time (Typ) :
10 ns
Rds On (Max) @ Id, Vgs :
15mOhm @ 7.4A, 10V
Min Operating Temperature :
-55°C
Number of Channels :
1
Mounting Type :
Surface Mount
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
PowerPAK® ChipFet Single
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Number of Pins :
8
Turn On Delay Time :
5 ns
RoHS Status :
ROHS3 Compliant
Input Capacitance :
1.61nF
Height :
750μm
Mount :
Surface Mount
Width :
1.9mm
Operating Temperature :
-55°C~150°C TJ
Rise Time :
10ns
Published :
2013
Gate to Source Voltage (Vgs) :
12V
Vgs (Max) :
±12V
Turn-Off Delay Time :
35 ns
Packaging :
Tape and Reel (TR)
FET Type :
N-Channel
Drain to Source Resistance :
15mOhm
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Continuous Drain Current (ID) :
12A
Vgs(th) (Max) @ Id :
2V @ 250μA
Power Dissipation-Max :
3.1W Ta 31W Tc
Max Operating Temperature :
150°C
Series :
TrenchFET®
Drain to Source Voltage (Vdss) :
30V
Package / Case :
PowerPAK® ChipFET™ Single
Input Capacitance (Ciss) (Max) @ Vds :
1610pF @ 15V
Datasheets
SI5482DU-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI5482DU-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Mounting Type:Surface Mount, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Package / Case:PowerPAK® ChipFET™ Single, SI5482DU-T1-GE3 pinout, SI5482DU-T1-GE3 datasheet PDF, SI5482DU-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI5482DU-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tape & Reel (TR) 15mOhm @ 7.4A, 10V ±12V 1610pF @ 15V 51nC @ 10V 30V PowerPAK® ChipFET™ Single

SI5482DU-T1-GE3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1610pF @ 15V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 15mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SI5482DU-T1-GE3 Features


a continuous drain current (ID) of 12A
the turn-off delay time is 35 ns
single MOSFETs transistor is 15mOhm
a 30V drain to source voltage (Vdss)


SI5482DU-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI5482DU-T1-GE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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