SI5482DU-T1-E3
- Mfr.Part #
- SI5482DU-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® ChipFET™ Single
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12A PPAK
- Stock
- 40,876
- In Stock :
- 40,876
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- PowerPAK® ChipFet Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 10ns
- Width :
- 1.9mm
- Drain to Source Resistance :
- 15mOhm
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- PowerPAK® ChipFET™ Single
- Packaging :
- Tape and Reel (TR)
- Rds On Max :
- 15 mΩ
- Vgs (Max) :
- ±12V
- Height :
- 750μm
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 15mOhm @ 7.4A, 10V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Input Capacitance :
- 1.61nF
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 12A
- Drain to Source Voltage (Vdss) :
- 30V
- Series :
- TrenchFET®
- Fall Time (Typ) :
- 10 ns
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Length :
- 3mm
- Turn-Off Delay Time :
- 35 ns
- Gate to Source Voltage (Vgs) :
- 12V
- Power Dissipation-Max :
- 3.1W Ta 31W Tc
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 5 ns
- Min Operating Temperature :
- -55°C
- Published :
- 2017
- Datasheets
- SI5482DU-T1-E3
N-Channel Tape & Reel (TR) 15mOhm @ 7.4A, 10V ±12V 1610pF @ 15V 51nC @ 10V 30V PowerPAK® ChipFET™ Single
SI5482DU-T1-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1610pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 15mOhm.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI5482DU-T1-E3 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 15mOhm
a 30V drain to source voltage (Vdss)
SI5482DU-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5482DU-T1-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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