SI5481DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 8V

Drain-source On Resistance-Max :

0.022Ohm

Number of Pins :

8

Drain to Source Breakdown Voltage :

-20V

Fall Time (Typ) :

167 ns

Continuous Drain Current (ID) :

12A

Number of Channels :

1

Width :

1.9mm

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 10V

Number of Terminations :

3

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

6 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Rise Time :

25ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

8

Package / Case :

PowerPAK® ChipFET™ Single

ECCN Code :

EAR99

Mount :

Surface Mount

Transistor Element Material :

SILICON

Number of Elements :

1

Mounting Type :

Surface Mount

Series :

TrenchFET®

Turn-Off Delay Time :

90 ns

Pulsed Drain Current-Max (IDM) :

20A

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

22m Ω @ 6.5A, 4.5V

Height :

750μm

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-XDSO-N3

Vgs (Max) :

±8V

Power Dissipation-Max :

3.1W Ta 17.8W Tc

Length :

3mm

Terminal Form :

NO LEAD

Published :

2012