SI5480DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Power Dissipation-Max :

3.1W Ta 31W Tc

Published :

2013

Series :

TrenchFET®

Terminal Finish :

PURE MATTE TIN

ECCN Code :

EAR99

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

Pbfree Code :

yes

Terminal Position :

Dual

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

16m Ω @ 7.2A, 10V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Transistor Element Material :

SILICON

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

12A

Terminal Form :

NO LEAD

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Resistance :

16mOhm

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

30A

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Elements :

1

JESD-30 Code :

R-PDSO-N4

Package / Case :

PowerPAK® ChipFET™ Single

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

FET Type :

N-Channel