SI5480DU-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Published :

2017

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Length :

3mm

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

3.1W Ta 31W Tc

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

10 ns

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Width :

1.9mm

JESD-30 Code :

R-XDSO-C3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

30A

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Package / Case :

PowerPAK® ChipFET™ Single

Continuous Drain Current (ID) :

12A

Rds On (Max) @ Id, Vgs :

16m Ω @ 7.2A, 10V

Number of Terminations :

3

Turn-Off Delay Time :

40 ns

Height :

750μm

Packaging :

Tape and Reel (TR)

Terminal Form :

C BEND

Rise Time :

10ns

Series :

TrenchFET®

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Terminal Position :

Dual

Fall Time (Typ) :

8 ns

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Case Connection :

DRAIN