SI5475DDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 6V

Mounting Type :

Surface Mount

Current :

6A

Contact Plating :

Tin

Rds On Max :

32 mΩ

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs(th) (Max) @ Id :

1V @ 250μA

Length :

3.05mm

Rise Time :

40ns

Width :

1.65mm

Mount :

Surface Mount

Number of Pins :

8

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

-6A

Turn On Delay Time :

20 ns

Power Dissipation-Max :

2.3W Ta 5.7W Tc

Packaging :

Tape and Reel (TR)

Supplier Device Package :

1206-8 ChipFET™

Number of Elements :

1

Gate to Source Voltage (Vgs) :

8V

Package / Case :

8-SMD, Flat Lead

Drain to Source Breakdown Voltage :

-12V

Number of Channels :

1

Height :

1.1mm

Rds On (Max) @ Id, Vgs :

32mOhm @ 5.4A, 4.5V

RoHS Status :

ROHS3 Compliant

Voltage :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

84.99187mg

FET Type :

P-Channel

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 8V

Drain to Source Resistance :

32mOhm

REACH SVHC :

Unknown

Min Operating Temperature :

-55°C

Resistance :

32mOhm

Input Capacitance :

1.6nF

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Threshold Voltage :

-400mV

Power Dissipation :

5.7W

Radiation Hardening :

No

Published :

2014

Series :

TrenchFET®

Fall Time (Typ) :

40 ns

Lead Free :

Lead Free

Vgs (Max) :

±8V

Turn-Off Delay Time :

45 ns

Drain to Source Voltage (Vdss) :

12V